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邱晓燕， 女， 西南大学物理学院教授， 博士生导师。大学本科毕业于西南大学物理学专业，硕士研究生毕吧洋识念吸百群装业于西南大学凝聚态物理专业，博士研究生毕业于血波研架南京大学凝聚态物理专业。主要承担《力学》和《理论力学》课程教学. 从事钙钛矿氧化物薄膜存储器件研究, 发表SCI科研论文50余篇, 授权国家发明来自专利2项. 先后主持国家和360百科省部级科研项目9项, Adv. Funct. Mater. , Appl. phys. lett., J. Appl. phys., China. Phys. Lett.等学术期刊审稿人. 国家自然科学基金通讯评审专家,河北省和广西壮族自治区自然科学基金特邀通讯评审专家.
- 中文名称 邱晓燕
- 国籍 中国
- 民族 汉
- 毕业院校 南京大学
- 学位/学历 博士学位/博士研究生
经历
2017/07-2017/来自09 香港理工大学应用物理系 SeniorVisiting Scholar
2014/07-2014/09 香港理工大学应用物理系 ResearchFellow
水源皇2012/08-2013/0流更答并路善8 美国德州大学圣宁致安东尼奥分校 Visiting Scholar
2006/08-2007/01 香港理工大学应用物理系 ResearchAssistant
学术成果
1. 重庆自然科学面上项目(cstc2019jcyj-msxmX0451)- 适用于人工神经突触的低压稳定多态电阻开关研究, 10飞车视话吧边万元, 2019.07-2022.07
2. 中央高校基本科研业务费重点项目(XDJK2018B034)- 应用于人工神经元的低压高性能电阻开关单元的制备与性能研究, 20万元, 2018.05-2020.12
3. 国家自然科学基金面上项目(11274257)-镶嵌金千属纳米微粒铪基氧化物薄360百科膜微结构调控的磁电性能,,84万元,2率模风八师右危各位013.01-2016.12
4. 国家自然科学青年基金项目(10904124)-HfAlOx介电薄膜d铁磁性与介电性的集成可行性探究, 23万元, 2010.01-2012.12
5. 重庆市自然科学基金项目(cstc2014jcyjA40029)-磁性氧化物单相薄膜的制备与阻变特性, 5万元, 2014.07-2017.06
6. 中央高校基本科研业务费重点项目(XDJK2014B043)-基于γ-注兵毛仍完Fe2O3薄膜的磁/电刑阻变存储器研究, 10万元, 2014.05-2016.05
7. 中央高校基本科研业某务费专项基金(XDJK2011C038)-非磁氧化物薄膜界面微结构调因天由号控的磁电效应, 4万元, 2011.05-2014.05
8. 重庆市自然科学基金项目(CSTC2007BB4352)-高介电栅介质材料铪铝酸盐薄膜的制备和界面性质研究, 2万元, 2007.07-2009.07.
9. 西南大学博士基金项目(标她菜树解SWUB2007007)-高介电常数栅介质材料铪铝酸盐薄膜的际几丝材毫答划离制备和界面性质研究, 3万元, 2007.04-200背9.04
代表论文
个人代表性科研论文:
X. Y. Qiu*, R. X. Wang, Z. Zhang块理护, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhan增离g, L. T. Li, X. S. Meng, Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO film五个胜修早具作端故s deposit去哥贵叫ed on metal seed layers, Appl. Phys. Let拿只胜奏史喜t., 2017, 111: 142103
利用磁控溅射方法在金属层上外延生长出氧化物薄膜并获得优良的电阻开关特性
X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
利用磁控溅射方法在氧化物衬底上制备出高质量的外延金属薄膜
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006, 88: 072906 (SCI引用次数31次)
首次借用相分离概念描述了高温退火过程中伪二元非晶薄膜均匀性的降解.
研究组近年发表的代表性科研论文(按发表时间倒序排列):
X. Jiang, M. L. Wei, C-H Chan,Y. Y. Wang, J. B. Wang, R. L. Lai, J. Y. Dai, andX. Y. Qiu*. Effect of deposition temperature on ultralow voltage resistive switching behavior of Fe-doped SrTiO3 films. Appl. Phys. Lett. 2020,116: 102101
Y. Y. Wang, L. T. Li, X. Jiang, J. B. Wang, R. L. Lai, and X. Y. Qiu*.Improved air-stability and low voltage resistive switching behaviors of NiO-buffered CH3NH3PbI3 films prepared by solution method. J. Phys. D: Appl. Phys. 2020, 53: 075101
W. J. Zhai, Y. Z. Xing, Y. Zhang, Y.Y. Wang, L.T. Li, M. L. Wei, X. Jiang, andX. Y. Qiu*. Photovoltaic characteristics of organic-inorganic hybrid perovskite CH3NH3PbI3 solar cell with NiO hole transport layer (in Chinese).Sci Sin-Phys Mech Astron, 2019, 49: 017001
T. Zhang, Z. Zhang, C-H Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, and X. Y. Qiu*. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films, J. Phys. D: Appl. Phys. 2018, 51 : 305105
X. Y. Qiu, X. S. Meng, H. Mao, Z. H. He, Y. Q. Lin , X. D. Liu, D. C. Li , J. Li*, Magnetic nanoparticles prepared by chemically induced transition: structure and magnetization behaviors, Mater. Chem. Phys. 2018, 204:328 -335
X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng,Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
R. X. Wang, T. Zhang, L.T. Li, M. L. Wei, X. S. Meng, X. Y. Qiu* Temperature-dependence of resistive switching behaviors and tunneling mechanism of polycrystalline NiOx films (in Chinese). Chin Sci Bull, 2017, 62: 1–9
X. Y. Qiu*,S. Y. Zhang,T. Zhang, R. X. Wang, L. T. Li, Y. Zhang,J. Y. Dai,Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films,Appl. Phys. A Mater. Sci. Process., 2016, 122:797
H. X. Zhu, T. Zhang, R. X. Wang, Y. Y. Zhang, L. T. Li, and X. Y. Qiu*, Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film, AIP Advances, 2016, 6: 055004
H. X. Zhu, J. Q. Huo, X. Y. Qiu*, Y. Y. Zhang, R. X. Wang, Y. Chen,Chi- Man Wong, Hei-Man Yau, J. Y. Dai, thickness-dependent bipolar resistive switching behaviors of NiOx films, Materials Science Forum, 2016, 847: 131-136
Y.Y Zhang, H X Zhu, H Ji, R.H. Wang, T. Zhang, L. L.Tao, X. Y. Qiu*, Microstructures of epitaxial Pt films on MgO and α-Al2O3 single-crystal substrates deposited by magnetron sputtering (in Chinese). Chin Sci Bull, 2016, 61: 1008 -1015
X. Y. Qiu*,G. D. Zhou, J. Lia, Y. Chen, X.H. Wang, J.Y. Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate, Thin Solid Films,2014(562): 674–679
X. Y. Qiu*, J. Li , P. Chen , Y. Zhang , Y. T. Tu , X. H. Wang W. Lu, Post-annealing treatments and interface effects on anomalous magnetic characteristics of HfOx film, Integrated Ferroelectrics, 2013(141): 145-153
Z. J. Liu, S. Y. Zhang, J. Q. Huo, J. Li, X. Y. Qiu*,Effect of HfOx buffer layer on the resistive switching characteristics of g-Fe2O3 nano-particle films (in Chinese). Sci Sin-Phys Mech Astron, 2014, 44: 417–424.
G. D. Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*,Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012(134): 13-15
X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong and J. Y. Da*, Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering, Microelectronic Engineering,2009 (86): 2247-2250
X. Y. Qiu，Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu*，Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulse laser deposition，Appl. Phys. Lett. 2006(89): 242504
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006(88): 072906
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, Z. G. Liu and J.-M. Liu*, Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition, Appl. Phys. Lett., 2006 (88): 182907
X. Y. Qiu, H. W. Liu and J.-M. Liu*, Thermal stability and interfacial properties of ZrAlxSiyOz films prepared by pulse-laser deposition, J. Appl. Phys. Lett., 2006 (100): 074109
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, X. H. Zhou, and J. –M. Liu* , Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition, Appl. Phys. A Mater. Sci. Proc. 2005 (81): 1431-1434
获奖情况
2019年,第四届重庆市大学生物理创新竞赛(二等奖)指导教师;
2018年,西南大学2016-2018学年度优秀教师;
2017年,西南大学物理学院第八届教师教学技能比赛一等奖;
2016年,西南大学本科生优秀毕业论文(一等奖)指导教师;
2015年,第二届重庆市大学生物理创新竞赛(三等奖)指导教师;
2010年,重庆市自然科学三等奖(排名第四).
1. 重庆自然科学面上项目(cstc2019jcyj-msxmX0451)- 适用于人工神经突触的低压稳定多态电阻开关研究, 10万元, 2019.07-2022.07
2. 中央高校基本科研业务费重点项目(XDJK2018B034)- 应用于人工神经元的低压高性能电阻开关单元的制备与性能研究, 20万元, 2018.05-2020.12
3. 国家自然科学基金面上项目(11274257)-镶嵌金属纳米微粒铪基氧化物薄膜微结构调控的磁电性能,,84万元,2013.01-2016.12
4. 国家自然科学青年基金项目(10904124)-HfAlOx介电薄膜d铁磁性与介电性的集成可行性探究, 23万元, 2010.01-2012.12
5. 重庆市自然科学基金项目(cstc2014jcyjA40029)-磁性氧化物单相薄膜的制备与阻变特性, 5万元, 2014.07-2017.06
6. 中央高校基本科研业务费重点项目(XDJK2014B043)-基于γ-Fe2O3薄膜的磁/电阻变存储器研究, 10万元, 2014.05-2016.05
7. 中央高校基本科研业务费专项基金(XDJK2011C038)-非磁氧化物薄膜界面微结构调控的磁电效应, 4万元, 2011.05-2014.05
8. 重庆市自然科学基金项目(CSTC2007BB4352)-高介电栅介质材料铪铝酸盐薄膜的制备和界面性质研究, 2万元, 2007.07-2009.07.
9. 西南大学博士基金项目(SWUB2007007)-高介电常数栅介质材料铪铝酸盐薄膜的制备和界面性质研究, 3万元, 2007.04-2009.04
代表论文
个人代表性科研论文:
X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng, Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
利用磁控溅射方法在金属层上外延生长出氧化物薄膜并获得优良的电阻开关特性
X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
利用磁控溅射方法在氧化物衬底上制备出高质量的外延金属薄膜
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006, 88: 072906 (SCI引用次数31次)
首次借用相分离概念描述了高温退火过程中伪二元非晶薄膜均匀性的降解.
研究组近年发表的代表性科研论文(按发表时间倒序排列):
X. Jiang, M. L. Wei, C-H Chan,Y. Y. Wang, J. B. Wang, R. L. Lai, J. Y. Dai, andX. Y. Qiu*. Effect of deposition temperature on ultralow voltage resistive switching behavior of Fe-doped SrTiO3 films. Appl. Phys. Lett. 2020,116: 102101
Y. Y. Wang, L. T. Li, X. Jiang, J. B. Wang, R. L. Lai, and X. Y. Qiu*.Improved air-stability and low voltage resistive switching behaviors of NiO-buffered CH3NH3PbI3 films prepared by solution method. J. Phys. D: Appl. Phys. 2020, 53: 075101
W. J. Zhai, Y. Z. Xing, Y. Zhang, Y.Y. Wang, L.T. Li, M. L. Wei, X. Jiang, andX. Y. Qiu*. Photovoltaic characteristics of organic-inorganic hybrid perovskite CH3NH3PbI3 solar cell with NiO hole transport layer (in Chinese).Sci Sin-Phys Mech Astron, 2019, 49: 017001
T. Zhang, Z. Zhang, C-H Chan, L. T. Li, M. L. Wei, X. S. Meng, J. Y. Dai, and X. Y. Qiu*. Visible-light enhanced charge storage characteristics of amorphous Ni-doped HfO2 films, J. Phys. D: Appl. Phys. 2018, 51 : 305105
X. Y. Qiu, X. S. Meng, H. Mao, Z. H. He, Y. Q. Lin , X. D. Liu, D. C. Li , J. Li*, Magnetic nanoparticles prepared by chemically induced transition: structure and magnetization behaviors, Mater. Chem. Phys. 2018, 204:328 -335
X. Y. Qiu*, R. X. Wang, Z. Zhang, M. L. Wei, H. Ji, Y. Chai, F. C. Zhou, J. Y. Dai,T. Zhang, L. T. Li, X. S. Meng,Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers, Appl. Phys. Lett., 2017, 111: 142103
X. Y. Qiu*, R.X. Wang, G. Q. Li, T. Zhang, L.T. Li, M.L. Wei, X.S. Meng, H. Ji, Z. Zhang, C.H. Chan, J.Y. Dai, Oxygen-dependent epitaxial growth of Pt (001) thin films on MgO(001) by magnetron sputtering, Appl. Surf. Sci., 2017, 406: 212–217
R. X. Wang, T. Zhang, L.T. Li, M. L. Wei, X. S. Meng, X. Y. Qiu* Temperature-dependence of resistive switching behaviors and tunneling mechanism of polycrystalline NiOx films (in Chinese). Chin Sci Bull, 2017, 62: 1–9
X. Y. Qiu*,S. Y. Zhang,T. Zhang, R. X. Wang, L. T. Li, Y. Zhang,J. Y. Dai,Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films,Appl. Phys. A Mater. Sci. Process., 2016, 122:797
H. X. Zhu, T. Zhang, R. X. Wang, Y. Y. Zhang, L. T. Li, and X. Y. Qiu*, Charge storage and tunneling mechanism of Ni nanocrystals embedded HfOx film, AIP Advances, 2016, 6: 055004
H. X. Zhu, J. Q. Huo, X. Y. Qiu*, Y. Y. Zhang, R. X. Wang, Y. Chen,Chi- Man Wong, Hei-Man Yau, J. Y. Dai, thickness-dependent bipolar resistive switching behaviors of NiOx films, Materials Science Forum, 2016, 847: 131-136
Y.Y Zhang, H X Zhu, H Ji, R.H. Wang, T. Zhang, L. L.Tao, X. Y. Qiu*, Microstructures of epitaxial Pt films on MgO and α-Al2O3 single-crystal substrates deposited by magnetron sputtering (in Chinese). Chin Sci Bull, 2016, 61: 1008 -1015
X. Y. Qiu*,G. D. Zhou, J. Lia, Y. Chen, X.H. Wang, J.Y. Dai,Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate, Thin Solid Films,2014(562): 674–679
X. Y. Qiu*, J. Li , P. Chen , Y. Zhang , Y. T. Tu , X. H. Wang W. Lu, Post-annealing treatments and interface effects on anomalous magnetic characteristics of HfOx film, Integrated Ferroelectrics, 2013(141): 145-153
Z. J. Liu, S. Y. Zhang, J. Q. Huo, J. Li, X. Y. Qiu*,Effect of HfOx buffer layer on the resistive switching characteristics of g-Fe2O3 nano-particle films (in Chinese). Sci Sin-Phys Mech Astron, 2014, 44: 417–424.
G. D. Zhou, S. Y. Zhang, Y. T. Tu, J. Li, P. Chen, J. Y. Dai, and X. Y. Qiu*,Anisotropy of Weak Ferromagnetism of HfAlOx Film Deposited by Magnetron Sputtering, Integrated Ferroelectrics, 2012(134): 13-15
X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong and J. Y. Da*, Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering, Microelectronic Engineering,2009 (86): 2247-2250
X. Y. Qiu，Q. M. Liu, F. Gao, L. Y. Lu, and J.-M. Liu*，Room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulse laser deposition，Appl. Phys. Lett. 2006(89): 242504
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, and J.-M. Liu* , Phase separation and interfacial reaction of high-k HfAlOX films prepared by pulsed-laser deposition in oxygen-deficient ambient, Appl. Phys. Lett. 2006(88): 072906
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, Z. G. Liu and J.-M. Liu*, Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition, Appl. Phys. Lett., 2006 (88): 182907
X. Y. Qiu, H. W. Liu and J.-M. Liu*, Thermal stability and interfacial properties of ZrAlxSiyOz films prepared by pulse-laser deposition, J. Appl. Phys. Lett., 2006 (100): 074109
X. Y. Qiu, H. W. Liu, F. Fang, M. J. Ha, X. H. Zhou, and J. –M. Liu* , Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition, Appl. Phys. A Mater. Sci. Proc. 2005 (81): 1431-1434
获奖情来自况
2019年,第四届重庆市大学生物理创新竞赛(二等奖)操上案所相字此德为害正指导教师;
2018年,西南大学2016-2018学年度优秀教师;
2017年,西南大学物理学院第八届教师教学技能比赛频利甲明宪吸义正微一等奖;
2016年,西南大学本科生优秀毕业论文(一等奖)指导教师;
2015年,第二届重庆市大学生物理创新竞赛(三等奖)指导教师;
2010年,重庆市自然科学三等奖(排名第四).